Project Description

Improving Reliability of In-Memory Storage

Researchers

Funding

  • Sponsor: National Science Foundation, CSR: Small: Collaborative Research
  • Amount of Support: $176,876
  • Duration of Support: 3 years
  • More details […]

Abstract

Emerging nonvolatile memory (NVM) technologies, such as PCM, STT-RAM, and memristors, provide not only byte-addressability, low-latency reads and writes comparable to DRAM, but also persistent writes and potentially large storage capacity like an SSD. These advantages make NVM likely to be next-generation fast persistent storage for massive data, referred to as in-memory storage. Yet, NVM-based storage has two challenges: (1) Memory cells have limited write endurance (i.e., the total number of program/erase cycles per cell); (2) NVM has to remain in a consistent state in the event of a system crash or power loss. The goal of this project is to develop an efficient in-memory storage framework that addresses these two challenges.

This project will take a holistic approach, spanning from low-level architecture design to high-level OS management, to optimize the reliability, performance, and manageability of in-memory storage. The technical approach will involve understanding the implication and impact of the write endurance issue when cutting-edge NVM is adopted into storage systems. The improved understanding will motivate and aid the design of cost-effective methods to improve the life-time of in-memory storage and to achieve efficient and reliable consistence maintenance.